ADG636 1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
Product Details
The ADG636 is a monolithic device, comprising two indepen-dently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions.
The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V.
This switch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. In addition, it offers on resistance of 85 Ω typical, which is matched to within 2 Ω between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds.
The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.
Product Highlights
- Ultralow charge injection. QINJ: ±1.5 pC typical over the full signal range
- Leakage current <0.25 nA maximum at 85°C
- Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply
- Automotive temperature range: −40°C to +125°C
- Small 14-lead TSSOP package
Applications
- Automatic test equipment
- Data acquisition systems
- Battery-powered instruments
- Communication systems
- Sample-and-hold systems
- Remote-powered equipment
- Audio and video signal routing
- Relay replacement
- Avionics
Features and Benefits
- 1 pC Charge Injection
- ±2.7 V to ±5.5 V Dual Supply
- +2.7 V to +5.5 V Single Supply
- Automotive Temperature Range:
–40°C to +125°C - 100 pA (Maximum @ 25°C) Leakage Currents
- 85 Ω Typical On Resistance
- Rail-to-Rail Operation
- Fast Switching Times
- Typical Power Consumption (<0.1 µW)
- TTL/CMOS Compatible Inputs
- 14-Lead TSSOP Package