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2SA1417S-TD-E

2SA1417S-TD-E
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номер части
2SA1417S-TD-E
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT BIP PNP 2A 100V
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 120 V
Collector- Emitter Voltage VCEO Max
- 100 V
Collector-Emitter Saturation Voltage
- 0.22 V
Configuration
Single
Continuous Collector Current
- 2 A
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
- 6 V
Gain Bandwidth Product fT
120 MHz
Maximum DC Collector Current
- 3 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SC-62-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.5 W
Product Type
BJTs - Bipolar Transistors
Series
2SA1417
Technology
SI
Transistor Polarity
PNP

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