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2SA1552S-TL-H

2SA1552S-TL-H
Изображения только для справки
номер части
2SA1552S-TL-H
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT BIP PNP 1.5A 160V
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 180 V
Collector- Emitter Voltage VCEO Max
- 160 V
Collector-Emitter Saturation Voltage
- 200 mV
Configuration
Single
DC Collector/Base Gain hfe Min
140
DC Current Gain hFE Max
400 at - 100 mA, - 5 V
Emitter- Base Voltage VEBO
- 6 V
Gain Bandwidth Product fT
120 MHz
Maximum DC Collector Current
- 1.5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
15 W
Product Type
BJTs - Bipolar Transistors
Series
2SA1552
Technology
SI
Transistor Polarity
PNP
Unit Weight

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последние обзоры

Напишите свой собственный Reivew
fast delivery, item as described, thanks!!
Quickly came to CET, all in one package. Look at the rules
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Thank You all fine, packed very well
Works. Find the price of this product is very good
Больше

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