номер части 2SA1182-GR,LF категории Bipolar Transistors - BJT RoHS Техническая спецификация 2SA1182-GR,LF Описание Bipolar Transistors - BJT PNP Transistor, VCEO=-30V, IC=-0.5A, hFE=200 to 400 in SOT-346 (S-Mini) package
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO - 35 V Collector- Emitter Voltage VCEO Max - 30 V Collector-Emitter Saturation Voltage - 0.1 V Configuration Single DC Collector/Base Gain hfe Min 70 DC Current Gain hFE Max 400 Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 200 MHz Maximum DC Collector Current - 500 mA Maximum Operating Temperature + 125 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SC-59-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 150 mW Product Type BJTs - Bipolar Transistors Series 2SA1182 Technology SI Transistor Polarity PNP