номер части 2SA1312GRTE85LF категории Bipolar Transistors - BJT RoHS Техническая спецификация 2SA1312GRTE85LF Описание Bipolar Transistors - BJT PNP Audio Amp VCEO -120V HFE 700
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO - 120 V Collector- Emitter Voltage VCEO Max - 120 V Configuration Single Continuous Collector Current - 100 mA DC Collector/Base Gain hfe Min 200 DC Current Gain hFE Max 700 Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 100 MHz Mounting Style SMD/SMT Package / Case SOT-346-3 Packaging Cut Tape Packaging MouseReel Packaging Reel Pd - Power Dissipation 150 mW Product Type BJTs - Bipolar Transistors Series 2SA1312 Technology SI Transistor Polarity PNP Unit Weight