номер части PZTA92,115 категории Bipolar Transistors - BJT RoHS Техническая спецификация PZTA92,115 Описание Bipolar Transistors - BJT TRANS HV TAPE-7
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO 300 V Collector- Emitter Voltage VCEO Max 300 V Configuration Single DC Collector/Base Gain hfe Min 25 at 1 mA, 10 V, 40 at 10 mA, 10 V, 25 at 30 mA, 10 V DC Current Gain hFE Max 25 at 1 mA, 10 V Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 50 MHz Height 1.7 mm Length 6.7 mm Maximum DC Collector Current 0.1 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case SOT-223-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 1200 mW Product Type BJTs - Bipolar Transistors Qualification AEC-Q101 Technology SI Transistor Polarity PNP Unit Weight Width 3.7 mm