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PZT651T1G

PZT651T1G
Изображения только для справки
номер части
PZT651T1G
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT 2A 80V NPN
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
80 V
Collector- Emitter Voltage VCEO Max
60 V
Collector-Emitter Saturation Voltage
0.5 V
Configuration
Single
Continuous Collector Current
2 A
DC Collector/Base Gain hfe Min
75
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
75 MHz
Height
1.57 mm
Length
6.5 mm
Maximum DC Collector Current
2 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-223-4
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
800 mW
Product Type
BJTs - Bipolar Transistors
Series
PZT651
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
3.5 mm

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последние обзоры

Напишите свой собственный Reivew
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
My package arrived wet, not know where occurs this fact, but working all right
Works. Find the price of this product is very good
The goods are OK, thank you dealers.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
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