номер части 2SA1618-GR(TE85L,F категории Bipolar Transistors - BJT RoHS Техническая спецификация 2SA1618-GR(TE85L,F Описание Bipolar Transistors - BJT -150mA -50V
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO - 50 V Collector- Emitter Voltage VCEO Max 50 V Configuration Dual Continuous Collector Current - 150 mA DC Collector/Base Gain hfe Min 200 DC Current Gain hFE Max 400 Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 80 MHz Height 1.1 mm Length 2.9 mm Maximum DC Collector Current 0.15 A Maximum Operating Temperature + 125 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SOT-25-5 Packaging Reel Pd - Power Dissipation 300 mW Product Type BJTs - Bipolar Transistors Series 2SA1618 Technology SI Transistor Polarity PNP Width 1.6 mm