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2SA1587GRTE85LF

2SA1587GRTE85LF
Изображения только для справки
номер части
2SA1587GRTE85LF
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 120 V
Collector- Emitter Voltage VCEO Max
- 120 V
Collector-Emitter Saturation Voltage
- 0.3 V
Configuration
Single
Continuous Collector Current
- 100 mA
DC Collector/Base Gain hfe Min
200
DC Current Gain hFE Max
700
Emitter- Base Voltage VEBO
- 5 V
Gain Bandwidth Product fT
100 MHz
Maximum DC Collector Current
- 100 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-323-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
100 mW
Product Type
BJTs - Bipolar Transistors
Series
2SA1587
Technology
SI
Transistor Polarity
PNP
Unit Weight

Категория пордука

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последние обзоры

Напишите свой собственный Reivew
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Takes 8 days to Japan. Good!
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Больше

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