номер части PZT3904-TP категории Bipolar Transistors - BJT RoHS Техническая спецификация PZT3904-TP Описание Bipolar Transistors - BJT NPN 60Vcbo 40Vceo 6Vebo 200mA 1W
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 40 V Collector-Emitter Saturation Voltage 0.3 V Configuration Single Continuous Collector Current 200 mA DC Collector/Base Gain hfe Min 40 DC Current Gain hFE Max 300 V Emitter- Base Voltage VEBO 6 V Gain Bandwidth Product fT 300 MHz Maximum DC Collector Current 200 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SOT-223-4 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 1 W Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity NPN