номер части D5011UK категории RF MOSFET Transistors RoHS Техническая спецификация D5011UK Описание RF MOSFET Transistors Silicon DMOS RF FET 10W-50V-500MHz SE
категории RF MOSFET Transistors Configuration Single Gain 13 dB Id - Continuous Drain Current 3 A Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Operating Frequency 500 MHz Output Power 10 W Package / Case SO-8 Pd - Power Dissipation 30 W Product Type RF MOSFET Transistors Technology SI Transistor Polarity N-Channel Type RF Power MOSFET Vds - Drain-Source Breakdown Voltage 125 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1 V to 7 V