номер части MG06100S-BN4MM категории IGBT Modules RoHS Техническая спецификация MG06100S-BN4MM Описание IGBT Modules 600V 100A Dual
категории IGBT Modules Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.45 V Configuration Dual Continuous Collector Current at 25 C 125 A Gate-Emitter Leakage Current 400 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case Package S Packaging Bulk Pd - Power Dissipation 330 W Product IGBT Silicon Modules Product Type IGBT Modules Series MG06100S Technology SI Unit Weight