номер части D2003UK категории RF MOSFET Transistors RoHS Техническая спецификация D2003UK Описание RF MOSFET Transistors Silicon DMOS RF FET 5W-28V-1GHz PP
категории RF MOSFET Transistors Configuration Dual Gain 13 dB Id - Continuous Drain Current 1 A Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Operating Frequency 1 GHz Output Power 5 W Package / Case DQ Pd - Power Dissipation 35 W Product Type RF MOSFET Transistors Technology SI Transistor Polarity N-Channel Type RF Power MOSFET Vds - Drain-Source Breakdown Voltage 65 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1 V to 7 V