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2SA1163-GRTE85LF

2SA1163-GRTE85LF
Изображения только для справки
номер части
2SA1163-GRTE85LF
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT VCEO -120V Audio IC -100mA IB 10dB
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 120 V
Collector- Emitter Voltage VCEO Max
- 120 V
Collector-Emitter Saturation Voltage
- 0.3 V
Configuration
Single
Continuous Collector Current
- 100 mA
DC Collector/Base Gain hfe Min
200
DC Current Gain hFE Max
700
Emitter- Base Voltage VEBO
- 5 V
Gain Bandwidth Product fT
100 MHz
Maximum DC Collector Current
- 100 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SC-59-3
Packaging
Reel
Pd - Power Dissipation
150 mW
Product Type
BJTs - Bipolar Transistors
Series
2SA1163
Technology
SI
Transistor Polarity
PNP
Unit Weight

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последние обзоры

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