номер части FB30R06W1E3 категории IGBT Modules RoHS Техническая спецификация FB30R06W1E3 Описание IGBT Modules IGBT-MODULE
категории IGBT Modules Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 2 V Configuration HEX Continuous Collector Current at 25 C 39 A Gate-Emitter Leakage Current 400 nA Height 12 mm Length 62.8 mm Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case EASY1B Packaging Tray Part # Aliases Pd - Power Dissipation 115 W Product IGBT Silicon Modules Product Type IGBT Modules Technology SI Unit Weight Width 33.8 mm