номер части TK16G60W5,RVQ категории MOSFET RoHS Техническая спецификация TK16G60W5,RVQ Описание MOSFET PWR MOSFET PD=130W F=1MHZ
категории MOSFET Channel Mode Enhancement Configuration Single Fall Time 5 ns Id - Continuous Drain Current 15.8 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case D2PAK-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 130 W Product Type MOSFET Qg - Gate Charge 43 nC Rds On - Drain-Source Resistance 230 mOhms Rise Time 40 ns Series TK16G60W Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 100 ns Typical Turn-On Delay Time 75 ns Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 10 V Vgs th - Gate-Source Threshold Voltage 3 V