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UF3C065080K3S

UF3C065080K3S
Изображения только для справки
номер части
UF3C065080K3S
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET 650V/80mOhm SiC FAST CASCODE G3 REDUCED Rth
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Id - Continuous Drain Current
31 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
190 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Rds On - Drain-Source Resistance
100 MOhms
Rise Time
14 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
54 ns
Typical Turn-On Delay Time
25 ns
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
6 V

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последние обзоры

Напишите свой собственный Reivew
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Quickly came to CET, all in one package. Look at the rules
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
High Quality driver, works excellent. It came to Moscow for 7 days.
Goods came in two weeks. Well packed. Track number tracked
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