- номер части
- QH8KA1TCR
- категории
- MOSFET
- RoHS
- Техническая спецификация
- Описание
- MOSFET 30V Nch+Nch Si MOSFET
QH8KA1TCR
Изображения только для справки
Характеристики
- категории
- MOSFET
- Channel Mode
- Enhancement
- Configuration
- Dual
- Fall Time
- 3.5 ns, 3.5 ns
- Forward Transconductance - Min
- 1.7 S, 1.7 S
- Id - Continuous Drain Current
- 4.5 A
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 2 Channel
- Package / Case
- TSMT-8
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Packaging
- Reel
- Part # Aliases
- Pd - Power Dissipation
- 2.4 W
- Product Type
- MOSFET
- Qg - Gate Charge
- 3 nC, 3 nC
- Rds On - Drain-Source Resistance
- 56 mOhms, 56 mOhms
- Rise Time
- 7.5 ns, 7.5 ns
- Technology
- SI
- Transistor Polarity
- N-Channel
- Transistor Type
- 2 N-Channel
- Typical Turn-Off Delay Time
- 10 ns, 10 ns
- Typical Turn-On Delay Time
- 5 ns, 5 ns
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
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последние обзоры
My package arrived wet, not know where occurs this fact, but working all right
Eddy Hustinx
Received, Fast shipping, not checked yet
Roy Boustany
Everything is excellent! recommend this seller!
Stoyan Chaykov
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
QH8KA1TCR Новости
03/14/2023
03/13/2023
03/13/2023
Ключевые слова к QH8K
- QH8KA1TCR интегрированный
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- QH8KA1TCR Горячие предложения
- QH8KA1TCR Цена перерыва
- QH8KA1TCR Технические данные
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