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QH8JA1TCR

QH8JA1TCR
Изображения только для справки
номер части
QH8JA1TCR
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET 20V Pch+Pch Si MOSFET
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
65 ns, 65 ns
Forward Transconductance - Min
5.5 S, 5.5 S
Id - Continuous Drain Current
5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
10.2 nC, 10.2 nC
Rds On - Drain-Source Resistance
28 mOhms, 28 mOhms
Rise Time
32 ns, 32 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
2 P-Channel
Typical Turn-Off Delay Time
70 ns, 70 ns
Typical Turn-On Delay Time
11 ns, 11 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.2 V

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последние обзоры

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thanks for resending, this item is good !
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Thank You all fine, packed very well
Fast shippng. Good quality. I recomend this seller.
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
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