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TK20N60W5,S1VF

TK20N60W5,S1VF
Изображения только для справки
номер части
TK20N60W5,S1VF
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET Power MOSFET N-Channel
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
6 ns
Height
20.95 mm
Id - Continuous Drain Current
20 A
Length
15.94 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
55 nC
Rds On - Drain-Source Resistance
150 mOhms
Rise Time
45 ns
Series
TK20N60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
90 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3 V
Width
5.02 mm

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последние обзоры

Напишите свой собственный Reivew
Received, Fast shipping, not checked yet
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Long Service and Russia!
Packed medium, in transit could поврелиться. But since it's safe, work perfectly
Больше

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