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UF3C065080K4S

UF3C065080K4S
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номер части
UF3C065080K4S
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET 650V 80mOhm SiC Cascode Fast
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Id - Continuous Drain Current
31 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-4
Packaging
Tube
Pd - Power Dissipation
190 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
100 MOhms
Rise Time
20 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
37 ns
Typical Turn-On Delay Time
21 ns
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
25 V
Vgs th - Gate-Source Threshold Voltage
4 V

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последние обзоры

Напишите свой собственный Reivew
fast delivery, item as described, thanks!!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Works. Find the price of this product is very good
The timer is running. 10 PCS. Packed properly.
Good material. Great seller, efficient and insurance. Ok
Больше

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