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TK14G65W,RQ

TK14G65W,RQ
Изображения только для справки
номер части
TK14G65W,RQ
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET Power MOSFET N-Channel
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
7 ns
Height
10.4 mm
Id - Continuous Drain Current
13.7 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-262-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
130 W
Product Type
MOSFET
Qg - Gate Charge
35 nC
Rds On - Drain-Source Resistance
220 mOhms
Rise Time
20 ns
Series
TK14G65W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
110 ns
Typical Turn-On Delay Time
60 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
4.5 mm

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последние обзоры

Напишите свой собственный Reivew
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
My package arrived wet, not know where occurs this fact, but working all right
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Decent quality, not минвелл certainly, but enough decent
Shipping a little 1 weeks, normal packing, the procedure is complete.
Больше

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