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TK20E60W,S1VX

TK20E60W,S1VX
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номер части
TK20E60W,S1VX
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
6 ns
Height
15.1 mm
Id - Continuous Drain Current
20 A
Length
10.16 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
48 nC
Rds On - Drain-Source Resistance
130 mOhms
Rise Time
25 ns
Series
TK20E60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
4.45 mm

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последние обзоры

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