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F20W60C3-7100

F20W60C3-7100
Изображения только для справки
номер части
F20W60C3-7100
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET Hi Switching Speed High Voltage
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Характеристики

категории
MOSFET
Fall Time
60 ns
Forward Transconductance - Min
8.7 S
Id - Continuous Drain Current
20 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
MTO-3P-3
Packaging
Tube
Pd - Power Dissipation
75 W
Product Type
MOSFET
Qg - Gate Charge
87 nC
Rds On - Drain-Source Resistance
190 mOhms
Rise Time
60 ns
Technology
SI
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
355 ns
Typical Turn-On Delay Time
32 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V

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последние обзоры

Напишите свой собственный Reivew
it is safe and sound all, thank you seller!
Hello! Order received, very happy. Thank you very much!
packed pretty good, all is ok,-seller.
Everything is excellent! recommend this seller!
High Quality driver, works excellent. It came to Moscow for 7 days.
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