номер части TK14V65W,LQ категории MOSFET RoHS Техническая спецификация TK14V65W,LQ Описание MOSFET PWR MOSFET DTMOS PD=139W F=1
категории MOSFET Channel Mode Enhancement Configuration Single Fall Time 7 ns Id - Continuous Drain Current 13.7 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case DFN8x8-5 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 139 W Product Type MOSFET Qg - Gate Charge 35 nC Rds On - Drain-Source Resistance 280 mOhms Rise Time 20 ns Series TK14V65W Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 110 ns Typical Turn-On Delay Time 60 ns Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage 10 V Vgs th - Gate-Source Threshold Voltage 2.5 V