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XP263N1001TR-G

XP263N1001TR-G
Изображения только для справки
номер части
XP263N1001TR-G
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET General-purpose N-channel MOSFET , 60V / 1A / SOT-23
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Id - Continuous Drain Current
1 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
0.4 W
Product Type
MOSFET
Qg - Gate Charge
3.6 nC
Rds On - Drain-Source Resistance
250 mOhms
Rise Time
8 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
35 ns
Typical Turn-On Delay Time
10 ns
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.1 V

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последние обзоры

Напишите свой собственный Reivew
all exactly and work. радиолюбителя useful set to, thank you)
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Perfectly.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
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