- номер части
- R5007ANX
- категории
- MOSFET
- RoHS
- Техническая спецификация
- Описание
- MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA
R5007ANX
Изображения только для справки
Характеристики
- категории
- MOSFET
- Channel Mode
- Enhancement
- Configuration
- Single
- Fall Time
- 25 ns
- Forward Transconductance - Min
- 2.5 s
- Id - Continuous Drain Current
- 7 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-220FP-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Part # Aliases
- Pd - Power Dissipation
- 40 W
- Product Type
- MOSFET
- Qg - Gate Charge
- 13 nC
- Rds On - Drain-Source Resistance
- 800 mOhms
- Rise Time
- 22 ns
- Series
- R5007ANX
- Technology
- SI
- Transistor Polarity
- N-Channel
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 50 ns
- Typical Turn-On Delay Time
- 20 ns
- Unit Weight
- Vds - Drain-Source Breakdown Voltage
- 500 V
- Vgs - Gate-Source Voltage
- 30 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
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последние обзоры
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
fast delivery
Mike Ibarra
Works. Recommend
Rajiv
Long Service and Russia!
Alex Yu
Seems well have not tested
Hazel Gooby
R5007ANX Новости
03/14/2023
03/13/2023
03/13/2023
Ключевые слова к R500
- R5007ANX интегрированный
- R5007ANX RoHS
- R5007ANX PDF Datasheet
- R5007ANX Техническая спецификация
- R5007ANX Часть
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- R5007ANX Поставка
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- R5007ANX Техническая спецификация
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- R5007ANX Горячие предложения
- R5007ANX Цена перерыва
- R5007ANX Технические данные
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