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UF3C120150K4S

UF3C120150K4S
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номер части
UF3C120150K4S
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET 1200V 150mOhm SiC FAST CASCODE G3
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Id - Continuous Drain Current
18.4 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-4
Packaging
Tube
Pd - Power Dissipation
166.7 W
Product Type
MOSFET
Qg - Gate Charge
25.7 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
330 mOhms
Rise Time
8 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
26 ns
Typical Turn-On Delay Time
21 ns
Vds - Drain-Source Breakdown Voltage
1.2 kV
Vgs - Gate-Source Voltage
25 V
Vgs th - Gate-Source Threshold Voltage
3.5 V

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последние обзоры

Напишите свой собственный Reivew
Hello! Order received, very happy. Thank you very much!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Thank You all fine, packed very well
Perfectly.
Works. Recommend
Больше

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Ключевые слова к UF3C

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