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RM100N60T2

RM100N60T2
Изображения только для справки
номер части
RM100N60T2
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET TO-251 MOSFET
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
13.6 ns
Forward Transconductance - Min
50 s
Id - Continuous Drain Current
100 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Packaging
Tube
Pd - Power Dissipation
170 W
Product Type
MOSFET
Qg - Gate Charge
85 nC
Rds On - Drain-Source Resistance
6.5 mOhms
Rise Time
10.8 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
55 ns
Typical Turn-On Delay Time
16.8 ns
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

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последние обзоры

Напишите свой собственный Reivew
fast delivery, item as described, thanks!!
Takes 8 days to Japan. Good!
packed pretty good, all is ok,-seller.
Shipping a little 1 weeks, normal packing, the procedure is complete.
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Больше

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