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RM100N30DF

RM100N30DF
Изображения только для справки
номер части
RM100N30DF
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET DFN MOSFET
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
39 ns
Forward Transconductance - Min
32 s
Id - Continuous Drain Current
100 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
DFN-8
Packaging
Reel
Pd - Power Dissipation
65 W
Product Type
MOSFET
Qg - Gate Charge
38 nC
Rds On - Drain-Source Resistance
2.5 mOhms
Rise Time
24 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
91 ns
Typical Turn-On Delay Time
26 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.2 V

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последние обзоры

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Teşekkürler
Quick delivery. Secure packing. Excellent product. Thank you
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
packed pretty good, all is ok,-seller.
Thank You all fine, packed very well
Больше

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