номер части D2009UK категории RF MOSFET Transistors RoHS Техническая спецификация D2009UK Описание RF MOSFET Transistors Silicon DMOS RF FET 10W-28V-1GHz PP
категории RF MOSFET Transistors Configuration Dual Gain 10 dB Id - Continuous Drain Current 2 A Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Operating Frequency 1 GHz Output Power 10 W Package / Case DQ Pd - Power Dissipation 58 W Product Type RF MOSFET Transistors Technology SI Transistor Polarity N-Channel Type RF Power MOSFET Vds - Drain-Source Breakdown Voltage 65 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1 V to 7 V