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2SA1987-O(Q)

2SA1987-O(Q)
Изображения только для справки
номер части
2SA1987-O(Q)
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT PWR TRANS V=230 PD=180W
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 230 V
Collector- Emitter Voltage VCEO Max
- 230 V
Collector-Emitter Saturation Voltage
- 1.5 V
Configuration
Single
Continuous Collector Current
- 1.5 A
DC Collector/Base Gain hfe Min
55
DC Current Gain hFE Max
160
Emitter- Base Voltage VEBO
- 5 V
Gain Bandwidth Product fT
30 MHz
Maximum DC Collector Current
- 1.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
2-21F1A-3
Packaging
Tube
Product Type
BJTs - Bipolar Transistors
Series
2SA
Technology
SI
Transistor Polarity
PNP

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последние обзоры

Напишите свой собственный Reivew
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Everything is excellent! recommend this seller!
Great product. Arrived ahead of time. Thank you
all is well. checked work. seller recommend.
receiver the timers in good condition with No bent legs due too the good package. However i haven teste Them All but they seem to have No disaffects.
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