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PZT2222AT1G

PZT2222AT1G
Изображения только для справки
номер части
PZT2222AT1G
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT 600mA 40V NPN
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
75 V
Collector- Emitter Voltage VCEO Max
40 V
Collector-Emitter Saturation Voltage
1 V
Configuration
Single
Continuous Collector Current
0.6 A
DC Collector/Base Gain hfe Min
35
Emitter- Base Voltage VEBO
6 V
Gain Bandwidth Product fT
300 MHz
Height
1.57 mm
Length
6.5 mm
Maximum DC Collector Current
0.6 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-223-4
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.5 W
Product Type
BJTs - Bipolar Transistors
Series
PZT2222A
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
3.5 mm

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