номер части 2SA1514KT146S категории Bipolar Transistors - BJT RoHS Техническая спецификация 2SA1514KT146S Описание Bipolar Transistors - BJT PNP 120V 50MA
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO - 120 V Collector- Emitter Voltage VCEO Max - 120 V Collector-Emitter Saturation Voltage - 0.5 V Configuration Single Continuous Collector Current - 50 mA DC Collector/Base Gain hfe Min 180 DC Current Gain hFE Max 560 Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 140 MHz Height 1.1 mm Length 2.9 mm Maximum DC Collector Current 0.05 A Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Package / Case SC-59-3 Packaging Cut Tape Packaging MouseReel Packaging Reel Pd - Power Dissipation 200 mW Product Type BJTs - Bipolar Transistors Series 2SA1514K Technology SI Transistor Polarity PNP Width 1.6 mm