номер части 2SA1417T-TD-E категории Bipolar Transistors - BJT RoHS Техническая спецификация 2SA1417T-TD-E Описание Bipolar Transistors - BJT BIP PNP 2A 100V
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO - 120 V Collector- Emitter Voltage VCEO Max - 100 V Collector-Emitter Saturation Voltage - 0.22 V Configuration Single Continuous Collector Current - 2 A DC Current Gain hFE Max 400 Emitter- Base Voltage VEBO - 6 V Gain Bandwidth Product fT 120 MHz Maximum DC Collector Current - 3 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case PCP-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 500 mW Product Type BJTs - Bipolar Transistors Series 2SA1417 Technology SI Transistor Polarity PNP