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2SA1943N(S1,E,S)

2SA1943N(S1,E,S)
Изображения только для справки
номер части
2SA1943N(S1,E,S)
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 230 V
Collector- Emitter Voltage VCEO Max
- 230 V
Collector-Emitter Saturation Voltage
- 1.5 V
Configuration
Single
Continuous Collector Current
- 15 A
DC Collector/Base Gain hfe Min
55
DC Current Gain hFE Max
160
Emitter- Base Voltage VEBO
- 5 V
Gain Bandwidth Product fT
30 MHz
Maximum DC Collector Current
- 15 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-3P-3
Pd - Power Dissipation
150 W
Product Type
BJTs - Bipolar Transistors
Series
2SA
Technology
SI
Transistor Polarity
PNP
Unit Weight

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последние обзоры

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My package arrived wet, not know where occurs this fact, but working all right
Hello! Order received, very happy. Thank you very much!
Works. Find the price of this product is very good
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
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Ключевые слова к 2SA1

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  • 2SA1943N(S1,E,S) RoHS
  • 2SA1943N(S1,E,S) PDF Datasheet
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