номер части 2SA1579T106S категории Bipolar Transistors - BJT RoHS Техническая спецификация 2SA1579T106S Описание Bipolar Transistors - BJT PNP 120V 50MA
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO - 120 V Collector- Emitter Voltage VCEO Max - 120 V Collector-Emitter Saturation Voltage - 500 mV Configuration Single DC Collector/Base Gain hfe Min 270 DC Current Gain hFE Max 270 at 2 mA, 6 V Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 140 MHz Height 0.8 mm Length 2 mm Maximum DC Collector Current - 50 mA Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Package / Case SOT-323-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 200 mW Product Type BJTs - Bipolar Transistors Series 2SA1579 Technology SI Transistor Polarity PNP Unit Weight Width 1.25 mm