номер части 2SA1587-GR,LF категории Bipolar Transistors - BJT RoHS Техническая спецификация 2SA1587-GR,LF Описание Bipolar Transistors - BJT Transistor for Low Freq. Amplification
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO - 120 V Collector- Emitter Voltage VCEO Max - 120 V Collector-Emitter Saturation Voltage - 300 mV Configuration Single DC Collector/Base Gain hfe Min 200 DC Current Gain hFE Max 700 Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 100 MHz Maximum DC Collector Current - 100 mA Maximum Operating Temperature + 125 C Mounting Style SMD/SMT Package / Case SC-70-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 100 mW Product Type BJTs - Bipolar Transistors Series 2SA1587 Technology SI Transistor Polarity PNP Unit Weight