- номер части
- VT6Z1T2R
- категории
- Bipolar Transistors - BJT
- RoHS
- Техническая спецификация
- Описание
- Bipolar Transistors - BJT NPN/PNP
VT6Z1T2R
Изображения только для справки
Характеристики
- категории
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- 20 V
- Collector- Emitter Voltage VCEO Max
- 20 V
- Collector-Emitter Saturation Voltage
- 120 mV
- Configuration
- Dual
- Continuous Collector Current
- 200 mA
- DC Collector/Base Gain hfe Min
- 120
- DC Current Gain hFE Max
- 560
- Emitter- Base Voltage VEBO
- 5 V
- Gain Bandwidth Product fT
- 350 MHz, 400 MHz
- Maximum DC Collector Current
- 400 mA, - 400 mA
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- SMD/SMT
- Package / Case
- VMT-6
- Packaging
- Reel
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Part # Aliases
- Pd - Power Dissipation
- 150 mW
- Product Type
- BJTs - Bipolar Transistors
- Series
- VT6Z1
- Technology
- SI
- Transistor Polarity
- NPN, PNP
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последние обзоры
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
goods very well received very good quality
Fabrice Cubaynes
Hello! Order received, very happy. Thank you very much!
Flavia
Thank You all fine, packed very well
Ulrich Bundke
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
VT6Z1T2R Новости
03/14/2023
03/13/2023
03/13/2023
Ключевые слова к VT6Z
- VT6Z1T2R интегрированный
- VT6Z1T2R RoHS
- VT6Z1T2R PDF Datasheet
- VT6Z1T2R Техническая спецификация
- VT6Z1T2R Часть
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- VT6Z1T2R дистрибьютор
- VT6Z1T2R PDF
- VT6Z1T2R Составная часть
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- VT6Z1T2R Горячие предложения
- VT6Z1T2R Цена перерыва
- VT6Z1T2R Технические данные
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