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ZTD09N50DE6QTA

ZTD09N50DE6QTA
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номер части
ZTD09N50DE6QTA
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT 50V Dual NPN Low Sat 1A 7V Vebo
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
50 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
24 mV
Configuration
Dual
DC Collector/Base Gain hfe Min
200 at 10 mA, 2 V
Emitter- Base Voltage VEBO
7 V
Gain Bandwidth Product fT
215 MHz
Maximum DC Collector Current
1 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-26-6
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
700 mW
Product Type
BJTs - Bipolar Transistors
Qualification
AEC-Q101
Series
ZTD09N50
Technology
SI
Transistor Polarity
NPN
Unit Weight

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последние обзоры

Напишите свой собственный Reivew
fast delivery, item as described, thanks!!
Received, Fast shipping, not checked yet
all exactly and work. радиолюбителя useful set to, thank you)
it is safe and sound all, thank you seller!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
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