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2SA1962OTU

2SA1962OTU
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номер части
2SA1962OTU
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT PNP 230V 15A 130W
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 250 V
Collector- Emitter Voltage VCEO Max
- 250 V
Collector-Emitter Saturation Voltage
- 400 mV
Configuration
Single
Continuous Collector Current
15 A
DC Collector/Base Gain hfe Min
80 at 1 A, 5 V
Emitter- Base Voltage VEBO
- 5 V
Gain Bandwidth Product fT
30 MHz
Height
19.9 mm
Length
15.6 mm
Maximum DC Collector Current
- 17 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-3P-3
Packaging
Tube
Pd - Power Dissipation
130000 mW
Product Type
BJTs - Bipolar Transistors
Series
2SA1962
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
4.8 mm

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последние обзоры

Напишите свой собственный Reivew
My package arrived wet, not know where occurs this fact, but working all right
all exactly and work. радиолюбителя useful set to, thank you)
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Works. Find the price of this product is very good
Shipping a little 1 weeks, normal packing, the procedure is complete.
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