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2SA1162-Y(TLSPF,T)

2SA1162-Y(TLSPF,T)
Изображения только для справки
номер части
2SA1162-Y(TLSPF,T)
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT SM SIG POWER TRANS
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 50 V
Collector- Emitter Voltage VCEO Max
- 50 V
Configuration
Single
Continuous Collector Current
- 150 mA
DC Collector/Base Gain hfe Min
70
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
- 5 V
Gain Bandwidth Product fT
80 MHz
Height
1.1 mm
Length
2.9 mm
Maximum DC Collector Current
0.15 A
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-346-3
Packaging
Reel
Pd - Power Dissipation
150 mW
Product Type
BJTs - Bipolar Transistors
Series
2SA1162
Technology
SI
Transistor Polarity
PNP
Width
1.5 mm

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последние обзоры

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Ключевые слова к 2SA1

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