номер части 2SA1419T-TD-H категории Bipolar Transistors - BJT RoHS Техническая спецификация 2SA1419T-TD-H Описание Bipolar Transistors - BJT BIP PNP 1.5A 160V
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO - 180 V Collector- Emitter Voltage VCEO Max - 160 V Collector-Emitter Saturation Voltage - 200 mV Configuration Single Continuous Collector Current - 1.5 A Emitter- Base Voltage VEBO - 6 V Gain Bandwidth Product fT 120 MHz Maximum DC Collector Current - 1.5 A Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 500 mW Product Type BJTs - Bipolar Transistors Series 2SA1419 Technology SI Transistor Polarity PNP Unit Weight