номер части ZTX415STZ категории Bipolar Transistors - BJT RoHS Техническая спецификация ZTX415STZ Описание Bipolar Transistors - BJT NPN Avalanche
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO 260 V Collector- Emitter Voltage VCEO Max 100 V Collector-Emitter Saturation Voltage 0.5 V Configuration Single Continuous Collector Current 0.5 A DC Current Gain hFE Max 25 at 10 mA, 10 V Emitter- Base Voltage VEBO 6 V Gain Bandwidth Product fT 40 MHz Height 4.01 mm Length 4.77 mm Maximum DC Collector Current 0.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Package / Case TO-92-3 Packaging Ammo Pack Pd - Power Dissipation 680 mW Product Type BJTs - Bipolar Transistors Series ZTX415 Technology SI Transistor Polarity NPN Unit Weight Width 2.41 mm