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2SA1552S-E

2SA1552S-E
номер части
2SA1552S-E
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT BIP PNP 1.5A 160V
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 180 V
Collector- Emitter Voltage VCEO Max
- 160 V
Collector-Emitter Saturation Voltage
- 0.2 V
Configuration
Single
Continuous Collector Current
- 1.5 A
DC Collector/Base Gain hfe Min
140
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
- 6 V
Gain Bandwidth Product fT
120 MHz
Maximum DC Collector Current
- 2.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TP-3
Packaging
Bulk
Pd - Power Dissipation
15 W
Product Type
BJTs - Bipolar Transistors
Series
2SA1552
Technology
SI
Transistor Polarity
PNP

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последние обзоры

Напишите свой собственный Reivew
Thanks for your feedback!
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Yes, they are all here. :)
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
The goods are OK, thank you dealers.
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