номер части 2SA1797T100Q категории Bipolar Transistors - BJT RoHS Техническая спецификация 2SA1797T100Q Описание Bipolar Transistors - BJT PNP 50V 3A
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO - 50 V Collector- Emitter Voltage VCEO Max - 50 V Configuration Single Continuous Collector Current - 2 A DC Collector/Base Gain hfe Min 82 DC Current Gain hFE Max 270 Emitter- Base Voltage VEBO - 6 V Gain Bandwidth Product fT 200 MHz Height 1.5 mm Length 4.5 mm Maximum DC Collector Current - 5 A Maximum Operating Temperature + 150 C Mounting Style Through Hole Packaging Reel Packaging Cut Tape Pd - Power Dissipation 2 W Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity PNP Width 2.5 mm