номер части D5029UK категории RF MOSFET Transistors RoHS Техническая спецификация D5029UK Описание RF MOSFET Transistors Silicon DMOS RF FET 350W-50V-175MHz PP
категории RF MOSFET Transistors Configuration Dual Gain 13 dB Id - Continuous Drain Current 21 A Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Operating Frequency 175 MHz Output Power 350 W Package / Case DR Pd - Power Dissipation 438 W Product Type RF MOSFET Transistors Technology SI Transistor Polarity N-Channel Type RF Power MOSFET Vds - Drain-Source Breakdown Voltage 125 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1 V to 7 V