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GB100XCP12-227

GB100XCP12-227
Изображения только для справки
номер части
GB100XCP12-227
категории
IGBT Modules
RoHS
Техническая спецификация
Описание
IGBT Modules 1200V 100A SIC IGBT CoPak
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Характеристики

категории
IGBT Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Configuration
IGBT-Inverter
Gate-Emitter Leakage Current
400 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
SOT-227
Packaging
Bulk
Product
IGBT Silicon Carbide Modules
Product Type
IGBT Modules
Series
GB100XCP12
Technology
SiC
Unit Weight

Категория пордука

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последние обзоры

Напишите свой собственный Reivew
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
fast delivery
Works. Recommend
Long Service and Russia!
Seems well have not tested
Больше

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