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TK12E80W,S1X

TK12E80W,S1X
Изображения только для справки
номер части
TK12E80W,S1X
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Id - Continuous Drain Current
11.5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
23 nC
Rds On - Drain-Source Resistance
380 mOhms
Rise Time
40 ns
Series
TK12E80W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
130 ns
Typical Turn-On Delay Time
70 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3 V

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последние обзоры

Напишите свой собственный Reivew
Yes, they are all here. :)
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Goods came in two weeks. Well packed. Track number tracked
Fast shippng. Good quality. I recomend this seller.
the photo in comparison with cheap. Delivery fast
Больше

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