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UF3C120080K4S

UF3C120080K4S
Изображения только для справки
номер части
UF3C120080K4S
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET 1200V 80mOhm SiC Cascode Fast
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Id - Continuous Drain Current
33 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-4
Packaging
Tube
Pd - Power Dissipation
254.2 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
100 MOhms
Rise Time
13 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
43 ns
Typical Turn-On Delay Time
33 ns
Vds - Drain-Source Breakdown Voltage
1200 V
Vgs - Gate-Source Voltage
25 V
Vgs th - Gate-Source Threshold Voltage
4 V

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последние обзоры

Напишите свой собственный Reivew
Received, Fast shipping, not checked yet
Quick delivery. Secure packing. Excellent product. Thank you
Everything is excellent! recommend this seller!
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
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